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IRLR3105PBF

Part No IRLR3105PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 25A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 20nC @ 5V
Max Input Capacitance 710pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 57W (Tc)
Maximum Rds On at Id,Vgs 37 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 040809-IRLR3105PBF
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Motor Drive & Control, Industrial
Ultra Librarian 3D Model Ultra Librarian IRLR3105PBF CAD Model

Description

The Infineon Technologies IRLR3105PBF is an N-channel MOSFET that can handle a maximum power dissipation of 57W (Tc) and a continuous drain current of 25A (Tc) at 25°C.

  • Maximum Power Dissipation: 57W (Tc)
  • Continuous Drain Current: 25A (Tc) @ 25°C
  • Drain-Source Breakdown Voltage: 55V
  • Maximum Rds On: 37 mOhm @ 15A, 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 20nC @ 5V
  • Package: D-Pak package
  • Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Applications: power management, motor drive, and industrial applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9605 $52.8275
130+ $0.7881 $102.4530
200+ $0.7635 $152.7000
275+ $0.7389 $203.1975
355+ $0.7142 $253.5410
470+ $0.6403 $300.9410
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,850 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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