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Same model may have multiple batches, images only for reference.
IRLS4030-7PPBF Real Image
Same model may have multiple batches, images only for reference.

IRLS4030-7PPBF

Part No IRLS4030-7PPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 190A D2PAK-7
Datasheet
IRLS4030-7PPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 190A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 140nC @ 4.5V
Max Input Capacitance 11490pF @ 50V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 370W (Tc)
Maximum Rds On at Id,Vgs 3.9 mOhm @ 110A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (7-Lead)
Dimension TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Win Source Part Number 1047656-IRLS4030-7PPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLS4030-7PPBF CAD Model

Description

The IRLS4030-7PPBF is a N-Channel MOSFET device manufactured by Infineon Technologies.

  • Popularity: medium
  • Surface Mount Device: Yes
  • Maximum Power Dissipation: 370W
  • Ideal for: applications where a MOSFET is required

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