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PHK04P02T,518 Nexperia USA Inc. PHK04P02T,518 label picture
Same model may have multiple batches, images only for reference.
PHK04P02T,518 Nexperia USA Inc. PHK04P02T,518 label picture
PHK04P02T,518 Nexperia USA Inc. PHK04P02T,518 label picture
Same model may have multiple batches, images only for reference.

PHK04P02T,518

Part No PHK04P02T,518
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 16V 4.66A 8-SOIC
Datasheet
PHK04P02T,518 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 16V
Continuous Drain Current at 25°C 4.66A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 600mV @ 1mA
Max Gate Charge 7.2nC @ 4.5V
Max Input Capacitance 528pF @ 12.8V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 5W (Tc)
Maximum Rds On at Id,Vgs 120 mOhm @ 1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1050163-PHK04P02T,518
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PHK04P02T,518 CAD Model

Description

The Nexperia USA Inc. PHK04P02T,518 is a P-Channel MOSFET transistor that is ideal for use in various applications such as power management, load switching, and battery protection circuits.

  • Channel Type: P-Channel
  • Package: 8-SO
  • Temperature Range: -55°C to 150°C
  • Power Dissipation: 5W
  • Drain-Source Breakdown Voltage: 16V
  • Continuous Drain Current: 4.66A @ 25°C
  • Gate-Source Threshold Voltage: 600mV @ 1mA
  • Input Capacitance: 528pF @ 12.8V

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