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NTMFS4C05NT1G

Part No NTMFS4C05NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11.9A SO8FL / Trans MOSFET N-CH 30V 21.7A 5-Pin(4+Tab) SO-FL T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 14nC @ 4.5V
Max Input Capacitance 1972pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 770mW (Ta), 33W (Tc)
Maximum Rds On at Id,Vgs 3.4 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 5-DFN (5x6) (8-SOFL)
Dimension 8-PowerTDFN
Win Source Part Number 060677-NTMFS4C05NT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name NTMFS4C05N
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian NTMFS4C05NT1G CAD Model

Description

The NTMFS4C05NT1G is a high-performance, N-channel power MOSFET designed and manufactured by ON Semiconductor, a leading supplier in the semiconductor industry. This MOSFET is part of ON Semiconductor's portfolio of energy-efficient devices, tailored for power management applications across a wide range of electronic systems.

Key Features

  • Low On-Resistance: The NTMFS4C05NT1G features a low on-resistance (RDS(on)), which enhances its efficiency by minimizing conductive losses. This characteristic is particularly beneficial in applications where power conservation is critical.
  • High Continuous Drain Current: With a high continuous drain current (ID) rating, this MOSFET can handle significant current loads, making it suitable for high-power applications.
  • Power Dissipation: It is capable of dissipating a substantial amount of power (PD), which contributes to its robustness and reliability in demanding scenarios.
  • Fast Switching Speed: The device offers fast switching speeds, which is essential for reducing switching losses and improving performance in high-frequency power conversion systems.
  • Low Threshold Voltage: A low gate threshold voltage (VGS(th)) facilitates the MOSFET's operation at lower voltages, enhancing its versatility in various circuit designs.

Applications

The NTMFS4C05NT1G is suitable for a diverse array of applications, including:

  • DC/DC converters
  • Power supply units
  • Motor control systems
  • Computing and server systems
  • Automotive components
  • Switching regulators

Package and Reliability

Encased in a compact, surface-mount package, the NTMFS4C05NT1G is designed for optimal thermal performance and space-saving on printed circuit boards. Its robust design ensures long-term reliability, even under strenuous conditions, making it a preferred choice for engineers and designers looking for a dependable power switching solution.

Environmental Compliance

ON Semiconductor is committed to environmental sustainability. The NTMFS4C05NT1G is compliant with RoHS (Restriction of Hazardous Substances) directives, ensuring that it is free from specific hazardous materials commonly used in electronics and electrical equipment.

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.4769 $50.0745
225+ $0.4462 $100.3950
350+ $0.4308 $150.7800
500+ $0.4000 $200.0000
655+ $0.3846 $251.9130
815+ $0.3693 $300.9795
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 104,180 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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