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Same model may have multiple batches, images only for reference.
SP8K80TB1
Same model may have multiple batches, images only for reference.

SP8K80TB1

Part No SP8K80TB1
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 10V DRIVE NCH+NCH MOSFET: COMPLE  /  Mosfet Array 2 N-Channel (Dual) 500V 500mA (Ta) 2W (Ta) Surface Mount 8-SOP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Rohm Semiconductor
Package Tape & Reel (TR)
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
Rds On (Max) @ Id, Vgs 11.7Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 3.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 23.5pF @ 25V
Power - Max 2W (Ta)
Mounting SMD (SMT)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOP
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 846-SP8K80TB1TR
Standard Package 2,500
Win Source Part Number 973739-SP8K80TB1
Ultra Librarian 3D Model Ultra Librarian SP8K80TB1 CAD Model

Description

The Rohm Semiconductor SP8K80TB1 is a dual N-channel FET transistor array with a maximum drain to source voltage of 500V, continuous drain current of 500mA @ 25°C, and a maximum Rds On of 11.7Ohm @ 250mA and 10V.

  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Gate Charge: 3.8nC @ 10V
  • Input Capacitance: 23.5pF @ 25V
  • MSL level: 1 (Unlimited)

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Quantity Unit Price Ext. Price
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43+ $2.3529 $101.1747
66+ $2.2793 $150.4338
91+ $2.2058 $200.7278
118+ $2.1323 $251.6114
157+ $1.9117 $300.1369
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