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SI3456CDV-T1-E3

Part No SI3456CDV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 7.7A 6TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 460pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta), 3.3W (Tc)
Maximum Rds On at Id,Vgs 34 mOhm @ 6.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 211629-SI3456CDV-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI3456CDV-T1-E3 CAD Model

Description

The Vishay 211629-SI3456CDV-T1-E3 is a MOSFET technology N-channel polarity product.

  • Maximum Power Dissipation: 2 watts (Ta) and 3.3 watts (Tc)
  • Maximum Drain-Source Breakdown Voltage: 30V
  • Supply and Demand: limited status due to it being obsolete (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
265+ $0.2189 $58.0085
645+ $0.1796 $115.8420
1,000+ $0.1741 $174.1000
1,375+ $0.1684 $231.5500
1,775+ $0.1629 $289.1475
2,375+ $0.1460 $346.7500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,500 pieces
MOQ: 265 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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