The SIS429DNT-T1-GE3 is a P-Channel MOSFET transistor from Vishay. It has a drain to source voltage (Vdss) rating of 30V and a continuous drain current (Id) rating of 20A @ 25°C.

• Drain to Source Voltage (Vdss): 30V
• Continuous Drain Current (Id): 20A @ 25°C
• On-Resistance: 21mOhm @ 10.5A and 10V
• Temperature Range: -55°C to 150°C
• Mounting Type: Surface Mount
• Package: PowerPAK® 1212-8
• Power Dissipation: 27.8W
• Gate Charge (Qg): 50nC @ 10V
• Input Capacitance (Ciss): 1350pF @ 15V
• Packaging: Tape & Reel
• Package Quantity: 3,000 pcs