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Same model may have multiple batches, images only for reference.
FQPF6N15 Real Image
Same model may have multiple batches, images only for reference.

FQPF6N15

Part No FQPF6N15
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 5A TO-220F
Datasheet
FQPF6N15 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 8.5nC @ 10V
Max Input Capacitance 270pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 38W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 2.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Dimension TO-220-3 Full Pack
Win Source Part Number 1039944-FQPF6N15
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQPF6N15 CAD Model

Description

The Fairchild/ON Semiconductor FQPF6N15 is an N-channel MOSFET with a drain-source breakdown voltage of 150V and a continuous drain current of 5A (Tc).

  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±25V
  • Maximum Rds On (Id,Vgs): 600 mOhm @ 2.5A, 10V
  • Maximum Input Capacitance: 270pF @ 25V
  • Temperature Range: -55°C to 175°C (TJ)
  • Mounting: Through-Hole

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