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IXTH96P085T

Part No IXTH96P085T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 85V 96A TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 85V
Continuous Drain Current at 25°C 96A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 180nC @ 10V
Max Input Capacitance 13100pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 298W (Tc)
Maximum Rds On at Id,Vgs 13 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049843-IXTH96P085T
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTH96P085T CAD Model

Description

The IXYS 1049843-IXTH96P085T is a P-channel MOSFET electronic component with a drain-source breakdown voltage of 85V and a continuous drain current of 96A (Tc) at 25°C.

  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 180nC @ 10V
  • Maximum Input Capacitance: 13100pF @ 25V
  • Maximum Rds On @ Id,Vgs: 13 mOhm @ 500mA, 10V
  • Power Dissipation: 298W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Suitable for: Discrete Semiconductor Products
  • Case/Package: TO-247 (IXTH)
  • Temperature Range: -55°C to 150°C (TJ)
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $9.5387 $57.2322
13+ $7.8267 $101.7471
20+ $7.5821 $151.6420
28+ $7.3375 $205.4500
36+ $7.0929 $255.3444
48+ $6.3592 $305.2416
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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