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Same model may have multiple batches, images only for reference.
HAT2267H-EL-E Real Image
Same model may have multiple batches, images only for reference.

HAT2267H-EL-E

Part No HAT2267H-EL-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 25A 5LFPAK
Datasheet
HAT2267H-EL-E Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Max Gate Charge 30nC @ 10V
Max Input Capacitance 2150pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 12.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 067813-HAT2267H-EL-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HAT2267H-EL-E CAD Model

Description

The Renesas Electronics America MOSFET 067813-HAT2267H-EL-E is a high-performance N-Channel power MOSFET.

  • Maximum Power Dissipation: 25W
  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current: 25A @ 25°C
  • Drive Voltage: 6V to 10V
  • Maximum Rds On: 16 mOhm @ Id, Vgs of 12.5A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Package: LFPAK, SC-100, SOT-669
  • Maximum Gate Charge: 30nC @ 10V
  • Maximum Input Capacitance: 2150pF @ 10V
  • Operating Temperature: 150°C (TJ)

This MOSFET is ideal for use in discrete semiconductor products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $11.4253 $68.5518
13+ $9.3740 $121.8620
20+ $9.0818 $181.6360
27+ $8.7884 $237.2868
34+ $8.4962 $288.8708
46+ $7.6172 $350.3912
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Availability: 12,710 pieces
MOQ: 6 pcs
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