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PD57030-E

Part No PD57030-E
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 65V 945MHZ PWRSO10 / RF Mosfet LDMOS 28 V 50 mA 945MHz 14dB 30W 10-PowerSO
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Manufacturer STMicroelectronics
Packaging Tube
Transistor Type LDMOS
Frequency 945MHz
Gain 14dB
Voltage - Test 28 V
Current Rating (Amps) 4A
Current - Test 50 mA
Power - Output 30W
Voltage - Rated 65 V
Case / Package PowerSO-10 Exposed Bottom Pad
Supplier Device Package 10-PowerSO
Base Product Number PD57030
RoHS Status ROHS3 Compliant
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number PD57030E,497-5307-5
Standard Package 50
Win Source Part Number 1325360-PD57030-E
Ultra Librarian 3D Model Ultra Librarian PD57030-E CAD Model

Description

The PD57030-E is a state-of-the-art RF power transistor designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This high-performance device is part of ST's LDMOS (Laterally Diffused Metal Oxide Semiconductor) family, tailored for RF power applications. It is specifically engineered to meet the demanding requirements of high-efficiency, broadband operation in the 30 MHz to 1 GHz frequency range.

Key Features

  • High Power Gain: The PD57030-E boasts a high power gain, which is essential for applications that require signal amplification, such as broadcast transmitters, cellular base stations, and RF energy applications.
  • Wide Frequency Range: With an operational frequency range of 30 MHz to 1 GHz, the PD57030-E is versatile and suitable for a variety of RF applications across different market segments.
  • High Efficiency: The device is designed to offer high efficiency, reducing power loss and improving overall system performance, which is particularly critical in power-sensitive applications.
  • Excellent Thermal Stability: The LDMOS technology ensures that the PD57030-E maintains its performance even under varying temperature conditions, contributing to the reliability and longevity of the device.
  • Robustness: The transistor is constructed to withstand harsh operating conditions, making it a reliable choice for industrial and commercial applications.

Applications

The PD57030-E is designed for a wide array of applications, including but not limited to:

  • RF Power Amplifiers for Broadcast
  • Cellular Base Station Amplifiers
  • Industrial, Scientific, and Medical (ISM) Band Applications
  • Professional Mobile Radio (PMR)

Conclusion

The PD57030-E RF power transistor from STMicroelectronics represents a blend of performance, efficiency, and reliability. Its broad frequency range, high power gain, and thermal stability make it an excellent choice for designers looking to optimize their RF power applications. Whether for broadcast, telecommunications, or industrial purposes, the PD57030-E stands out as a robust and versatile component in the RF power domain.

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