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STD8NM60ND

Part No STD8NM60ND
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 560pF @ 50V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 70W (Tc)
Maximum Rds On at Id,Vgs 700 mOhm @ 3.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 117201-STD8NM60ND
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian STD8NM60ND CAD Model

Description

The STD8NM60ND is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leading name in semiconductor technology. This MOSFET is part of the MDmesh™ II Plus low Qg series, which is renowned for its excellent efficiency and thermal performance. Designed to handle high current and high voltage operations, the STD8NM60ND is an ideal choice for a variety of power applications including switch-mode power supplies, power converters, and motor control circuits.

Key Features

  • Low On-Resistance: The device boasts an extremely low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in applications.
  • High Voltage Capability: With a drain-source voltage (V<sub>DSS) of up to 600V, the STD8NM60ND can safely handle high-voltage power conversion tasks.
  • Low Gate Charge: The low gate charge (Qg) characteristic of the MDmesh™ II Plus series ensures fast switching performance, which is critical for reducing switching losses in power circuits.
  • Improved dv/dt Capability: The device is engineered to withstand high voltage transients, offering reliable performance in applications with fast voltage changes.
  • 100% Avalanche Tested: Each unit undergoes rigorous testing to ensure it can handle the specified energy in avalanche conditions, providing additional reliability and robustness.

Applications

The STD8NM60ND's robustness and efficiency make it suitable for a wide range of applications, including:

  • High-efficiency switch-mode power supplies (SMPS)
  • Power converters and inverters
  • LED lighting solutions
  • Motor control systems
  • Power management functions

With its combination of high voltage and current capabilities, low on-resistance, and fast switching speeds, the STD8NM60ND from STMicroelectronics stands out as a power component that can enhance the performance and reliability of electronic systems. Whether you are designing for industrial, consumer, or automotive applications, this MOSFET is engineered to meet the stringent requirements of modern power electronics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
26+ $2.2857 $59.4282
62+ $1.8757 $116.2934
96+ $1.8168 $174.4128
132+ $1.7579 $232.0428
170+ $1.6990 $288.8300
228+ $1.5234 $347.3352
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 26 pcs
Order Increment : 1 pcs
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